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Si7216DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient a, b t ? 10 s
Maximum Junction-to-Case (Drain) Steady State
Symbol
R thJA
R thJC
Typical
38
4.5
Maximum
50
6
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 94 °C/W.
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
? V DS /T J
? V GS(th) /T J
V GS = 0, I D = 250 μA
I D = 250 μA
40
43
- 5.8
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
1
3
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 40 V, V GS = 0 V
V DS = 40 V, V GS = 0 V, T J = 55 °C
V DS ?? 5 V, V GS = 10 V
10
± 100
1
10
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS ?? 10 V, I D = 5 A
V GS ?? 4.5 V, I D = 4 A
V DS = 15 V, I D = 5 A
0.025
0.031
25
0.032
0.039
?
S
Dynamic
b
Input Capacitance
C iss
670
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 20 V, V GS = 0 V, f = 1 MHz
90
50
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 20 V, V GS = 10 V, I D = 5 A
V DS = 20 V, V GS = 4.5 V, I D = 5 A
12.5
5.5
2
19
8.5
nC
Gate-Drain Charge
Q gd
2
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
R g
t d(on)
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
f = 1 MHz
V DD = 20 V, R L = 4 ?
I D ? 5 A, V GEN = 4.5 V, R g = 1 ?
V DD = 20 V, R L = 4 ?
I D ? 5 A, V GEN = 10 V, R g = 1 ?
3.4
16
142
16
7
9
57
19
5
5.1
25
215
25
12
15
90
30
10
?
ns
www.vishay.com
2
Document Number: 73771
S11-1142-Rev. C, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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